1. 9001cc金沙以诚为本



      1. 电信基础设施 相关应用

        Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
        DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
        DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50 38.8 40.5 28.0 Released Product
        DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10 34.0 32.0 20.0 Released Product
        DXG1CH08A-540EF* 780P2 758~821 540 49.0 58.0 18.0 Released Product
        DXG2CH22A-520EF* 780P2 2110~2170 510 49.0 58.2 14.8 Released Product
        DXG1CH27A-200EF* 780P2 2496~2690 220 45.0 50.0 14.1 Released Product
        DXG2CH27A-500EFV* 780P2 2500~2700 500 47.2 52.9 15.0 Released Product
        DXG1CH38A-200EF* 780P2 3300~3800 200 44.5 45.0 15.3 Released Product
        DXG2CH38A-450EFV* 780P2 3300~3800 450 47.5 46.0 14.5 Released Product
        DXG1CHD8A-F2EF* 780P2 3300~3800 450 48.5 42.0 14.0 Released Product
        DXG2CH50A-200EF* 780P2 4800~5000 200 44.5 44.2 14.2 Released Product
        DXG1PH22A-120N* DFN 7mm×10mm 1805~2170 120 42.3 55.5 14.6 Released Product
        DXG2PH27A-100N* DFN 7mm×6.5mm 2496~2690 90 41.3 56.5 15.9 Released Product
        DXG2PH36A-70N* DFN 7mm×6.5mm 3300~3800 60 39.3 53.5 15.4 Released Product
        DXG2PH36A-100N* DFN 7mm×6.5mm 3300~3800 100 41.3 54.3 15.8 Released Product
        DXG2PH50B-20N* DFN 4mm×4.5mm 4400~5000 20 47.8 37.0 16.0 In Development
        DXG2PH50A-90N* DFN 7mm×6.5mm 4800~5000 90 41.3 48.3 12.5 In Development
        DXG2PH60B-14N* DFN 4mm×4.5mm DC~6000 14 / 41.8 15.4 Released Product
        DXG1PH60P-40N DFN 7mm×6.5mm DC~6000 40 33.0 31.7 21.3 Released Product
        DXG1PH60P-60N* DFN 7mm×6.5mm DC~6000 60 40.0 55.0 19.5 Released Product
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        DXG2CH50A-450EF*

        Brief description for the product

        DXG2CH50A-450EF*

        DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        4800

        MHz

        Frequency (Max.)

        5000

        MHz

        Supply Voltage (Typ.)

        52

        V

        Psat (Typ.)

        56.6

        dBm

        Power Gain @ 4900 MHz

        11.8

        dB

        Efficiency @ 4900 MHz

        42.6

        %

        ACPR @ 4900 MHz-34.0/-47.0dBc


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2MH50A-50N*

        Brief description for the product

        DXG2MH50A-50N*

        DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        2496

        MHz

        Frequency (Max.)

        2690

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        49.9

        dBm

        Power Gain @ 2600 MHz

        15.9

        dB

        Efficiency @ 2600 MHz

        56.5

        %

        ACPR @ 2600 MHz-32.5dBc


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG1PH60B-10N2*

        Brief description for the product

        DXG1PH60B-10N2*

        DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        DC

        MHz

        Frequency (Max.)

        6000

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        40.3

        dBm

        Power Gain @ 3500 MHz

        20.2

        dB

        Efficiency @ 3500 MHz

        32.3

        %


        Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


        DXG1CH08A-540EF*

        Brief description for the product

        DXG1CH08A-540EF*

        DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


        Operating Characteristics


        Parameter

        Value

        Unit

        Frequency (Min.)

        758

        MHz

        Frequency (Max.)

        821

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        57.0

        dBm

        Power Gain @ 780 MHz

        18.0

        dB

        Efficiency @ 780 MHz

        58.0

        %

        ACPR @ 780 MHz

        -28.0

        dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2CH22A-520EF*

        Brief description for the product

        DXG2CH22A-520EF*

        DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        2110

        MHz

        Frequency (Max.)

        2170

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        57.1

        dBm

        Power Gain @ 2140 MHz

        14.8

        dB

        Efficiency @ 2140 MHz

        58.2

        %

        ACPR @ 2140 MHz

        -34.6

        dBC


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG1CH27A-200EF*

        Brief description for the product

        DXG1CH27A-200EF*

        DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        2496

        MHz

        Frequency (Max.)

        2690

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        53.4

        dBm

        Power Gain @ 2595 MHz

        14.1

        dB

        Efficiency @ 2595 MHz

        50.0

        %

        ACPR @ 2595 MHz

        -30.0

        dBc


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2CH27A-500EFV*

        Brief description for the product

        DXG2CH27A-500EFV*

        DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


        Operating Characteristics


        Parameter

        Value

        Unit

        Frequency (Min.)

        2500

        MHz

        Frequency (Max.)

        2700

        MHz

        Supply Voltage (Typ.)

        47

        V

        56.7Psat (Typ.)

        56.7

        dBm

        Power Gain @ 2593 MHz

        15.0

        dB

        Efficiency @ 2593 MHz

        52.9

        %

        ACPR @ 2593 MHz-32.9dBc


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG1CH38A-200EF*

        Brief description for the product

        DXG1CH38A-200EF*

        DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.

         


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        3300

        MHz

        Frequency (Max.)

        3800

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        53.0

        dBm

        Power Gain @ 3500 MHz

        15.3

        dB

        Efficiency @ 3500 MHz

        45.0

        %

        ACPR @ 3500 MHz

        -30.0

        dBC

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2CH38A-450EFV*

        Brief description for the product

        DXG2CH38A-450EFV*

        DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        3300

        MHz

        Frequency (Max.)

        3800

        MHz

        Supply Voltage (Typ.)

        50

        V

        Psat (Typ.)

        56.7

        dBm

        Power Gain @ 3500 MHz

        14.7

        dB

        Efficiency @ 3500 MHz

        46

        %

        ACPR @ 3500 MHz-34.2dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG1CHD8A-F2EF*

        Brief description for the product

        DXG1CHD8A-F2EF*

        DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

        Operating Characteristics

        ParameterValueUnit
        Frequency (Min.)3300MHz
        Frequency (Max.)3800MHz
        Supply Voltage (Typ.)52V
        Psat (Typ.) 56.5dBm
        Power Gain @ 3400 MHz14.0dB
        Efficiency @ 3400 MHz42.0%
        ACPR @ 3400 MHz-28.0dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2CH50A-200EF*

        Brief description for the product

        DXG2CH50A-200EF*

        DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        4800

        MHz

        Frequency (Max.)

        5000

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        53.2

        dBm

        Power Gain @ 4900 MHz

        14.2

        dB

        Efficiency @ 4900 MHz

        44.5

        %

        ACPR @ 4900 MHz-28.5/-47dBc


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG1PH22A-120N*

        Brief description for the product

        DXG1PH22A-120N*

        DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.

        Operating Characteristics

        ParameterValueUnit
        Frequency (Min.)1805MHz
        Frequency (Max.)2170MHz
        Supply Voltage (Typ.)48V
        Psat (Typ.) 50.8dBm
        Power Gain @ 2110 MHz14.6dB
        Efficiency @ 2110 MHz55.5%
        ACPR @ 2100 MHz-35.0dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2PH27A-100N*

        Brief description for the product

        DXG2PH27A-100N*

        DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz. 


        Operating Characteristics

        ParameterValueUnit
        Frequency (Min.)2496MHz
        Frequency (Max.)2690MHz
        Supply Voltage (Typ.)48V
        Psat (Typ.) 49.9dBm
        Power Gain @ 2600 MHz15.9dB
        Efficiency @ 2600 MHz56.5%
        ACPR @ 2600 MHz-32.5dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2PH36A-70N*

        Brief description for the product

        DXG2PH36A-70N*

        DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        3300

        MHz

        Frequency (Max.)

        3800

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        48.1

        dBm

        Power Gain @ 3500 MHz

        15.4

        dB

        Efficiency @ 3500 MHz

        53.5

        %

        ACPR @ 3500 MHz-31.0dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


        DXG2PH36A-100N*

        Brief description for the product

        DXG2PH36A-100N*

        DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.

        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        3300

        MHz

        Frequency (Max.)

        3800

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        50.2

        dBm

        Power Gain @ 3500 MHz

        15.8

        dB

        Efficiency @ 3500 MHz

        54.3

        %

        ACPR @ 3500 MHz

        -32.0

        dBC

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

        DXG2PH50B-20N*

        Brief description for the product

        DXG2PH50B-20N*

        DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.

        Operating Characteristics

        ParameterValueUnit
        Frequency (Min.)4400MHz
        Frequency (Max.)5000MHz
        Supply Voltage (Typ.)48V
        Psat (Typ.) 42.8dBm
        Power Gain @ 4900 MHz16.0dB
        Efficiency @ 4900 MHz47.8%

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA,  Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

        DXG2PH50A-90N*

        Brief description for the product

        DXG2PH50A-90N*

        DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.


        Operating Characteristics

        ParameterValueUnit
        Frequency (Min.)4800MHz
        Frequency (Max.)5000MHz
        Supply Voltage (Typ.)48V
        Psat (Typ.) 49.6dBm
        Power Gain @ 4880 MHz12.5dB
        Efficiency @ 4880 MHz48.3%
        ACPR @ 4880 MHz-32.0dBc

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

        DXG2PH60B-14N*

        Brief description for the product

        DXG2PH60B-14N*

        DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        0

        MHz

        Frequency (Max.)

        6000

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        42.2

        dBm

        Power Gain @ 3500 MHz

        15.4

        dB

        Efficiency @ 3500 MHz

        41.8

        %

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

        DXG1PH60P-40N

        Brief description for the product

        DXG1PH60P-40N

        DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

        applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        DC

        MHz

        Frequency (Max.)

        6000

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        46.3

        dBm

        Power Gain @ 1842 MHz

        21.3

        dB

        Efficiency @ 1842 MHz

        31.7

        %

        ACPR @ 1842 MHz

        -41.0

        dBc


        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

         


        DXG1PH60P-60N*

        Brief description for the product

        DXG1PH60P-60N*

        DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

        applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


        Operating Characteristics

        Parameter

        Value

        Unit

        Frequency (Min.)

        DC

        MHz

        Frequency (Max.)

        6000

        MHz

        Supply Voltage (Typ.)

        48

        V

        Psat (Typ.)

        47.8

        dBm

        Power Gain @  1842   MHz

        19.5

        dB

        Efficiency  @    1842   MHz

        55.0

        %

        ACPR @   1842   MHz

        -30.0

        dBC

        Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.




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